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| PD - 94182 IRFZ24VS IRFZ24VL HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS(on) = 60m G S ID = 17A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24VL) is available for low-profile applications. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 68 44 0.29 20 17 4.4 4.2 -55 to + 175 300 (1.6mm from case ) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted)** Typ. --- --- Max. 3.4 40 Units C/W www.irf.com 1 02/14/02 IRFZ24VS/IRFZ24VL Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 60 --- --- 2.0 7.8 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.06 --- --- --- --- --- --- --- --- --- --- 7.6 46 21 24 4.5 7.5 --- 590 --- 140 --- 23 --- 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 60 m VGS = 10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 23 ID = 17A 7.7 nC VDS = 48V 6.2 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 17A ns --- RG = 18 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 43 mJ IAS = 17A, L = 300H D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 --- --- showing the A G integral reverse 68 --- --- S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 17A, VGS = 0V --- 53 79 ns TJ = 25C, IF = 17A --- 90 130 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 300H RG = 25, IAS = 17A, VGS=10V (See Figure 12) ISD 17A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Uses IRFZ24V data and test conditions. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ24VS/IRFZ24VL 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1 4.5V 0.1 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 1 0.1 20s PULSE WIDTH T = 175 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C ID = 17A 2.5 2.0 10 1.5 1.0 0.5 1 4 6 8 V DS = 25V 20s PULSE WIDTH 10 12 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFZ24VS/IRFZ24VL 1000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd ID = 17A VGS , Gate-to-Source Voltage (V) 800 16 C, Capacitance(pF) Ciss 600 Coss = C + Cgd ds VDS = 48V VDS = 30V VDS = 12V 12 Coss 400 8 200 Crss 4 0 1 10 100 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 16 20 12 24 VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 TJ = 175 C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 10 ID, Drain-to-Source Current (A) 100 10 100sec 1msec 1 TJ = 25 C V GS = 0 V 0.6 1.0 1.4 1.8 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec 0.1 0.2 0.1 VSD ,Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFZ24VS/IRFZ24VL 20 VDS VGS RD I D , Drain Current (A) 15 D.U.T. + RG -VDD VGS 10 Pulse Width 1 s Duty Factor 0.1 % 5 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.0001 0.001 P DM t1 t2 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFZ24VS/IRFZ24VL 80 EAS , Single Pulse Avalanche Energy (mJ) 1 5V VDS L D R IV E R 60 TOP BOTTOM ID 6.9A 12A 17A RG VV 2 0GS D .U .T IA S tp 0 .0 1 + - VD D A 40 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFZ24VS/IRFZ24VL Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRFZ24VS/IRFZ24VL D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRFZ24VS/IRFZ24VL TO-262 Package Outline TO-262 Part Marking Information www.irf.com 9 IRFZ24VS/IRFZ24VL D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .60 (.06 3 ) 1 .50 (.05 9 ) 0 .3 6 8 (.0 14 5 ) 0 .3 4 2 (.0 13 5 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .60 (.4 5 7 ) 1 1 .40 (.4 4 9 ) 15 .4 2 (.60 9 ) 15 .2 2 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 10 .9 0 (.42 9 ) 10 .7 0 (.42 1 ) 1.7 5 (.0 69 ) 1.2 5 (.0 49 ) 1 6 .1 0 ( .6 3 4) 1 5 .9 0 ( .6 2 6) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) FE E D D IR E C T IO N 1 3.50 (.5 32) 1 2.80 (.5 04) 2 7.40 (1.07 9) 2 3.90 (.941 ) 4 3 30 .00 (1 4.1 73) M A X. 6 0.00 (2.36 2) M IN . N O TE S : 1 . CO M FO R M S TO E IA- 418 . 2 . CO N TR O L LIN G D IM EN S IO N : M ILL IM ET E R . 3 . DIM EN S IO N M EA S UR E D @ H UB . 4 . IN C LU D ES F LA N G E D IS T O R T IO N @ O U T ER ED G E. 26 .40 (1.03 9) 24 .40 (.9 61 ) 3 30 .4 0 (1.19 7) M A X. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02 10 www.irf.com |
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